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Strong Influence of Temperature and Vacuum on the Photoluminescence of In0.3Ga0.7AS Buried and Surface Quantum Dots

Guodong WANG Huiqiang JI Junling SHEN Yonghao XU Xiaolian LIU Ziyi FU

光子传感器（英文版）2018，Vol.8Issue(3)：213-219,7.

光子传感器（英文版）2018，Vol.8Issue(3)：213-219,7.DOI:10.1007/s13320-018-0475-z

Strong Influence of Temperature and Vacuum on the Photoluminescence of In0.3Ga0.7AS Buried and Surface Quantum Dots

Guodong WANG ¹Huiqiang JI ²Junling SHEN ²Yonghao XU ¹Xiaolian LIU ¹Ziyi FU²

作者信息

1. School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China
2. School of Electrical Engineering and Automation, Henan Polytechnic University, Jiaozuo 454000, China
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摘要

关键词

Surface quantum dots/photoluminescence/temperature/vacuum/InGaAs

Key words

Surface quantum dots/photoluminescence/temperature/vacuum/InGaAs

引用本文复制引用

Guodong WANG,Huiqiang JI,Junling SHEN,Yonghao XU,Xiaolian LIU,Ziyi FU..Strong Influence of Temperature and Vacuum on the Photoluminescence of In0.3Ga0.7AS Buried and Surface Quantum Dots[J].光子传感器（英文版）,2018,8(3):213-219,7.

基金项目

The authors gratefully acknowledge the supports from the National Natural Science Foundation of China (Grant No.U1304608),the Project of Henan Provincial Department of Science and Technology (Grant No.182102410047),and the Program of Henan Polytechnic University (Grant No.T2015-3). （Grant No.U1304608）

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