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Characterizations of high-voltage vertically-stacked GaAs laser power converter

Jie Huang Yurun Sun Yongrning Zhao Shuzhen Yu Kuilong Li Jianrong Dong Jiping Xue Chi Xue Yang Ye

半导体学报（英文版）2018，Vol.39Issue(9)：44-49,6.

半导体学报（英文版）2018，Vol.39Issue(9)：44-49,6.DOI:10.1088/1674-4926/39/9/094006

Characterizations of high-voltage vertically-stacked GaAs laser power converter

Jie Huang ¹Yurun Sun ²Yongrning Zhao ¹Shuzhen Yu ¹Kuilong Li ²Jianrong Dong ¹Jiping Xue ³Chi Xue ¹Yang Ye⁴

作者信息

1. Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
2. University of Chinese Academy of Sciences, Beijing 100049, China
3. College of Science, Qilu University of Technology(Shandong Academy of Sciences), Jinan 250353, China
4. Zhongtian Technology Group Co.Ltd, Nantong 226009, China
折叠

摘要

关键词

six-junction/laser power converters (LPCs)/GaAs

Key words

six-junction/laser power converters (LPCs)/GaAs

引用本文复制引用

Jie Huang,Yurun Sun,Yongrning Zhao,Shuzhen Yu,Kuilong Li,Jianrong Dong,Jiping Xue,Chi Xue,Yang Ye..Characterizations of high-voltage vertically-stacked GaAs laser power converter[J].半导体学报（英文版）,2018,39(9):44-49,6.

基金项目

Project supported by the National Natural Science Foundation of China (No.61604171),the Jiangsu Province Science Foundation for Youths (No.BK20170431),and Zhongtian Technology Group Co.Ltd. （No.61604171）

半导体学报（英文版）

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ISSN：1674-4926

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