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Coeffect of trapping behaviors on the performance of GaN-based devices

Xingye Zhou Xin Tan Yuangang Wang Xubo Song Peng Xu Guodong Gu Yuanjie Lü Zhihong Feng

半导体学报（英文版）2018，Vol.39Issue(9)：50-54,5.
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半导体学报（英文版）2018，Vol.39Issue(9)：50-54,5.DOI:10.1088/1674-4926/39/9/094007

Coeffect of trapping behaviors on the performance of GaN-based devices

Coeffect of trapping behaviors on the performance of GaN-based devices

Xingye Zhou 1Xin Tan 1Yuangang Wang 1Xubo Song 1Peng Xu 1Guodong Gu 1Yuanjie Lü 1Zhihong Feng1

作者信息

  • 1. National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
  • 折叠

摘要

关键词

GaN-based HEMT/device physics/trapping effect/transient simulation

Key words

GaN-based HEMT/device physics/trapping effect/transient simulation

引用本文复制引用

Xingye Zhou,Xin Tan,Yuangang Wang,Xubo Song,Peng Xu,Guodong Gu,Yuanjie Lü,Zhihong Feng..Coeffect of trapping behaviors on the performance of GaN-based devices[J].半导体学报（英文版）,2018,39(9):50-54,5.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.61604137,61674130). （Nos.61604137,61674130）

半导体学报（英文版）

OACSCDCSTPCD

1674-4926

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