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Impact of ambient temperature on the self-heating effects in FinFETs

Longxiang Yin Gang Du Xiaoyan Liu

半导体学报（英文版）2018，Vol.39Issue(9)：74-81,8.

半导体学报（英文版）2018，Vol.39Issue(9)：74-81,8.DOI:10.1088/1674-4926/39/9/094011

Impact of ambient temperature on the self-heating effects in FinFETs

Longxiang Yin ¹Gang Du ¹Xiaoyan Liu¹

作者信息

1. Institute of Microelectronics, Peking University, Beijing 100871, China
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摘要

关键词

self-heating effects/ambient temperature/FinFET/Monte Carlo method

Key words

self-heating effects/ambient temperature/FinFET/Monte Carlo method

引用本文复制引用

Longxiang Yin,Gang Du,Xiaoyan Liu..Impact of ambient temperature on the self-heating effects in FinFETs[J].半导体学报（英文版）,2018,39(9):74-81,8.

基金项目

Project supported by the National Key Technology Research and Development Program of China (No.2016YFA0202101),the National Natural Science Foundation of China (Nos.61421005,61604005),and the National High-Tech R&D Program (863 Program) (No.2015AA016501).The simulation was carried out at National Supercomputer Center in Tianjin,with TianHe-1 (A). （No.2016YFA0202101）

半导体学报（英文版）

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ISSN：1674-4926

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