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Steady state electrical-thermal coupling analysis of TSV

Jingrui Chai Gang Dong Zheng Mei Weijun Zhu

半导体学报（英文版）2018，Vol.39Issue(9)：82-87,6.

半导体学报（英文版）2018，Vol.39Issue(9)：82-87,6.DOI:10.1088/1674-4926/39/9/095001

Steady state electrical-thermal coupling analysis of TSV

Jingrui Chai ¹Gang Dong ¹Zheng Mei ¹Weijun Zhu¹

作者信息

1. School of Microelectronics, Xidian University, Xi'an 710071, China
折叠

摘要

关键词

through-silicon-via (TSV)/electrical-thermal coupling/temperature/iterative

Key words

through-silicon-via (TSV)/electrical-thermal coupling/temperature/iterative

引用本文复制引用

Jingrui Chai,Gang Dong,Zheng Mei,Weijun Zhu..Steady state electrical-thermal coupling analysis of TSV[J].半导体学报（英文版）,2018,39(9):82-87,6.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.61574106,61574104),the National Defense Pre-Research Foundation of China (No.9140A23060115DZ01062),and the Key Science and Technology Special Project of Shaanxi Province (No.2015KTCQ01-5). （Nos.61574106,61574104）

半导体学报（英文版）

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ISSN：1674-4926

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