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Impact of varying carbon concentration in SiC S/D asymmetric dual-k spacer for high performance and reliable FinFET

Maisagalla Gopal Atul Awadhiya Nandakishor Yadav S.K.Vishvakarma Vaibhav Neema

半导体学报（英文版）2018，Vol.39Issue(10)：17-22,6.

半导体学报（英文版）2018，Vol.39Issue(10)：17-22,6.DOI:10.1088/1674-4926/39/10/104001

Impact of varying carbon concentration in SiC S/D asymmetric dual-k spacer for high performance and reliable FinFET

Maisagalla Gopal ¹Atul Awadhiya ²Nandakishor Yadav ¹S.K.Vishvakarma ¹Vaibhav Neema³

作者信息

1. Discipline of Electrical Engineering, Indian Institute of Technology Indore, Indore(M.P)-452020, India
2. Department of Electronics and Instrumentation Engineering, Institute of Engineering and Technology, Devi Ahilya University, Indore(M.P)-452017, India
3. Department of Electronics and Telecommunication Engineering, Institute of Engineering and Technology, Devi Ahilya University, Indore(M.P)-452017, India
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摘要

关键词

asymmetric dual-k spacer/short channel effects (SCEs)/SiC S/D stressors/reliability/process variation

Key words

asymmetric dual-k spacer/short channel effects (SCEs)/SiC S/D stressors/reliability/process variation

引用本文复制引用

Maisagalla Gopal,Atul Awadhiya,Nandakishor Yadav,S.K.Vishvakarma,Vaibhav Neema..Impact of varying carbon concentration in SiC S/D asymmetric dual-k spacer for high performance and reliable FinFET[J].半导体学报（英文版）,2018,39(10):17-22,6.

基金项目

We are thankful to the Indian Institute of Technology Indore for providing the laboratory facility under the CSIR Grant No:22/0651/14/EMR-II to conduct this work and we also extend our sincere thanks to the M.P.Council of Science & Technology,Bhopal,India,for financial support under the R&D project scheme No:1950/CST/R&D/Phy & Engg Sc/2015:27th Aug 2015. （）

半导体学报（英文版）

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ISSN：1674-4926

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