半导体学报（英文版）2018，Vol.39Issue(10)：23-33,11.DOI:10.1088/1674-4926/39/10/104002
Research progress and challenges of two dimensional MoS2 field effect transistors
Research progress and challenges of two dimensional MoS2 field effect transistors
N Divya Bharathi 1K Sivasankaran1
作者信息
- 1. School of Electronics Engineering, VIT University, Vellore-632014, India
- 折叠
摘要
关键词
TMDs material/band structure/mobility/on/off current ratio/contact resistanceKey words
TMDs material/band structure/mobility/on/off current ratio/contact resistance引用本文复制引用
N Divya Bharathi,K Sivasankaran..Research progress and challenges of two dimensional MoS2 field effect transistors[J].半导体学报（英文版）,2018,39(10):23-33,11.
