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Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode

Swagata Dey Vedatrayee Chakraborty Bratati Mukhopadhyay Gopa Sen

半导体学报（英文版）2018，Vol.39Issue(10)：34-38,5.

半导体学报（英文版）2018，Vol.39Issue(10)：34-38,5.DOI:10.1088/1674-4926/39/10/104003

Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode

Swagata Dey ¹Vedatrayee Chakraborty ²Bratati Mukhopadhyay ¹Gopa Sen¹

作者信息

1. Institute of Radio Physics and Electronics, University of Calcutta, Kolkata 700009, India
2. B.P.Poddar Institute of Management and Technology(ECE Dept), Kolkata 700052, India
折叠

摘要

关键词

DBQW/MQW/RTD/NDR/tunneling current density

Key words

DBQW/MQW/RTD/NDR/tunneling current density

引用本文复制引用

Swagata Dey,Vedatrayee Chakraborty,Bratati Mukhopadhyay,Gopa Sen..Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode[J].半导体学报（英文版）,2018,39(10):34-38,5.

基金项目

The second author (VC) acknowledges supports from B.P.Poddar Institute of Management and Technology (ECE Dept),Kolkata.The first author (SD) acknowledges support by TEQIP-Phase Ⅲ under University College of Technology-Calcutta University (UCT-CU) through award of a fellowship. （VC）

半导体学报（英文版）

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ISSN：1674-4926

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