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Performance improvement of light-emitting diodes with double superlattices confinement layer

Cheng Cheng Yan Lei Zhiqiang Liu Miao He Zhi Li Xiaoyan Yi Junxi Wang Jinmin Li Deping Xiong

半导体学报（英文版）2018，Vol.39Issue(11)：47-50,4.

半导体学报（英文版）2018，Vol.39Issue(11)：47-50,4.DOI:10.1088/1674-4926/39/11/114005

Performance improvement of light-emitting diodes with double superlattices confinement layer

Cheng Cheng ¹Yan Lei ²Zhiqiang Liu ¹Miao He ³Zhi Li ¹Xiaoyan Yi ²Junxi Wang ³Jinmin Li ¹Deping Xiong¹

作者信息

1. Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China
2. University of Chinese Academy of Sciences, Beijing 100049, China
3. School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
折叠

摘要

关键词

double superlattices/LED/GaN

Key words

double superlattices/LED/GaN

引用本文复制引用

Cheng Cheng,Yan Lei,Zhiqiang Liu,Miao He,Zhi Li,Xiaoyan Yi,Junxi Wang,Jinmin Li,Deping Xiong..Performance improvement of light-emitting diodes with double superlattices confinement layer[J].半导体学报（英文版）,2018,39(11):47-50,4.

基金项目

Project supported by the National Key Research and Development Program of China (No.2016YFB0400102),the Beijing Municipal Science and Technology Project (Nos.Z161100002116032,D12110300140000),the National Basic Research Program of China (No.2011CB301902),the Guangzhou Science & Technology Planning Project of Guangdong Province,China (Nos.201604016095,201604030035),the Zhongshan Science & Technology Planning Project of Guangdong Province,China (No.2017A1008),and the Science & Technology Planning Project of Guangdong Province (No.2015B010112002). （No.2016YFB0400102）

半导体学报（英文版）

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ISSN：1674-4926

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