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Investigation of the on-state behaviors of the variation of lateral width LDMOS device by simulation

Panpan Tang Ying Wang Xiongfei Meng Sufen Cui

半导体学报（英文版）2018，Vol.39Issue(11)：55-61,7.

半导体学报（英文版）2018，Vol.39Issue(11)：55-61,7.DOI:10.1088/1674-4926/39/11/114007

Investigation of the on-state behaviors of the variation of lateral width LDMOS device by simulation

Panpan Tang ¹Ying Wang ²Xiongfei Meng ³Sufen Cui³

作者信息

1. College of Information and Communication Engineering, Harbin Engineering University, Harbin 150001, China
2. Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China
3. ZTE Microelectronics Technology Co., LTD., Shenzhen 518000, China
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摘要

关键词

SOI/self-heating effect/specific on-resistance/LDMOS transistor

Key words

SOI/self-heating effect/specific on-resistance/LDMOS transistor

引用本文复制引用

Panpan Tang,Ying Wang,Xiongfei Meng,Sufen Cui..Investigation of the on-state behaviors of the variation of lateral width LDMOS device by simulation[J].半导体学报（英文版）,2018,39(11):55-61,7.

基金项目

Project supported by the National Natural Science Foundation of China (No.61774052) and the Excellent Youth Foundation of Zhejiang Province of China (No.LR17F040001). （No.61774052）

半导体学报（英文版）

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ISSN：1674-4926

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