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Memory characteristics of microcavity dielectric barrier discharge

Yanzhou Sun Xiaoqian Liu Dati Su Huibin Yang

半导体学报（英文版）2018，Vol.39Issue(11)：62-67,6.

半导体学报（英文版）2018，Vol.39Issue(11)：62-67,6.DOI:10.1088/1674-4926/39/11/114008

Yanzhou Sun ¹Xiaoqian Liu ¹Dati Su ¹Huibin Yang¹

作者信息

1. School of Electrical Engineering and Automation, Henan Polytechnic University, Jiaozuo 454000, China
折叠

microcavity dielectric barrier discharge/memristor/Ⅰ-Ⅴ characteristic/memory characteristics

microcavity dielectric barrier discharge/memristor/Ⅰ-Ⅴ characteristic/memory characteristics

Yanzhou Sun,Xiaoqian Liu,Dati Su,Huibin Yang..Memory characteristics of microcavity dielectric barrier discharge[J].半导体学报（英文版）,2018,39(11):62-67,6.

Project supported by the National Natural Science Foundation of China (Nos.U1204506,11405044). （Nos.U1204506,11405044）

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ISSN：1674-4926

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