| 注册
首页|期刊导航|半导体学报(英文版)|Analysis and performance exploration of high performance (HfO2) SOI FinFETs over the conventional (Si3N4) SOI FinFET towards analog/RF design

Analysis and performance exploration of high performance (HfO2) SOI FinFETs over the conventional (Si3N4) SOI FinFET towards analog/RF design

Neeraj Jain Balwinder Raj

半导体学报(英文版)2018,Vol.39Issue(12):68-74,7.
半导体学报(英文版)2018,Vol.39Issue(12):68-74,7.DOI:10.1088/1674-4926/39/12/124002

Analysis and performance exploration of high performance (HfO2) SOI FinFETs over the conventional (Si3N4) SOI FinFET towards analog/RF design

Analysis and performance exploration of high performance (HfO2) SOI FinFETs over the conventional (Si3N4) SOI FinFET towards analog/RF design

Neeraj Jain 1Balwinder Raj1

作者信息

  • 1. VLSI Design Lab,Department of Electronics and Communication Engineering,Dr.B.R.Ambedkar National Institute of Technology(NIT),Jalandhar(Punjab),India
  • 折叠

摘要

关键词

SOI FinFET/SCEs/intrinsic gain/trans-conductance/cut-off frequency

Key words

SOI FinFET/SCEs/intrinsic gain/trans-conductance/cut-off frequency

引用本文复制引用

Neeraj Jain,Balwinder Raj..Analysis and performance exploration of high performance (HfO2) SOI FinFETs over the conventional (Si3N4) SOI FinFET towards analog/RF design[J].半导体学报(英文版),2018,39(12):68-74,7.

半导体学报(英文版)

OACSCDCSTPCD

1674-4926

访问量0
|
下载量0
段落导航相关论文