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Simulation study of a 4H-SiC lateral BJT for monolithic power integration

Shiwei Liang Jun Wang Fang Fang Linfeng Deng

半导体学报（英文版）2018，Vol.39Issue(12)：81-84,4.

半导体学报（英文版）2018，Vol.39Issue(12)：81-84,4.DOI:10.1088/1674-4926/39/12/124004

Simulation study of a 4H-SiC lateral BJT for monolithic power integration

Shiwei Liang ¹Jun Wang ¹Fang Fang ¹Linfeng Deng¹

作者信息

1. College of Electrical and Information Engineering,Hunan University,Changsha 410082,China
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摘要

关键词

SiC BJT/integrated circuit/current gain/power integration

Key words

SiC BJT/integrated circuit/current gain/power integration

引用本文复制引用

Shiwei Liang,Jun Wang,Fang Fang,Linfeng Deng..Simulation study of a 4H-SiC lateral BJT for monolithic power integration[J].半导体学报（英文版）,2018,39(12):81-84,4.

基金项目

Project supported by the National Natural Science Foundation of China (No.51577054). （No.51577054）

半导体学报（英文版）

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ISSN：1674-4926

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