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The influence of MBE and device structure on the electrical properties of GaAs HEMT biosensors

Jiaming Luo Min Guan Yang Zhang Liqiang Chen Yiping Zeng

半导体学报（英文版）2018，Vol.39Issue(12)：95-98,4.

半导体学报（英文版）2018，Vol.39Issue(12)：95-98,4.DOI:10.1088/1674-4926/39/12/124007

The influence of MBE and device structure on the electrical properties of GaAs HEMT biosensors

Jiaming Luo ¹Min Guan ²Yang Zhang ¹Liqiang Chen ¹Yiping Zeng²

作者信息

1. Key Laboratory of Semiconductor Materials Science,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
2. College of Materials Science and Optoelectronic Devices,University of Chinese Academy of Sciences,Beijing 100049,China
折叠

摘要

关键词

GaAs HEMT/biosensor/electrical properties

Key words

GaAs HEMT/biosensor/electrical properties

引用本文复制引用

Jiaming Luo,Min Guan,Yang Zhang,Liqiang Chen,Yiping Zeng..The influence of MBE and device structure on the electrical properties of GaAs HEMT biosensors[J].半导体学报（英文版）,2018,39(12):95-98,4.

基金项目

Project supported by the National Key Research and Development Program of China (No.2017YFB0405400),the Open Research Fund Program of the State Key Laboratory of Virology of China (No.2017IOV002),the National Natural Science Foundation of China (Nos.61274049,61404130,61574140),and the Shenzhen Science and Technology Innovation Commission (No.JSGG20160608100922614). （No.2017YFB0405400）

半导体学报（英文版）

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ISSN：1674-4926

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