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Interfacial passivation of n-ZnO/p-Si heterojunction by CuI thin layer

Chao Xiong Jin Xiao Lei Chen Wenhan Du Weilong Xu Dongdong Hou

半导体学报（英文版）2018，Vol.39Issue(12)：131-134,4.

半导体学报（英文版）2018，Vol.39Issue(12)：131-134,4.DOI:10.1088/1674-4926/39/12/124013

Interfacial passivation of n-ZnO/p-Si heterojunction by CuI thin layer

Chao Xiong ¹Jin Xiao ¹Lei Chen ¹Wenhan Du ¹Weilong Xu ¹Dongdong Hou¹

作者信息

1. School of Electrical and Photoelectronic Engineering,Changzhou Institute of Technology,Changzhou 213032,China
折叠

摘要

关键词

ZnO/p-Si/heterojunction/CuI/interface states/electrical properties

Key words

ZnO/p-Si/heterojunction/CuI/interface states/electrical properties

引用本文复制引用

Chao Xiong,Jin Xiao,Lei Chen,Wenhan Du,Weilong Xu,Dongdong Hou..Interfacial passivation of n-ZnO/p-Si heterojunction by CuI thin layer[J].半导体学报（英文版）,2018,39(12):131-134,4.

基金项目

Project supported by the "333 High-Level Talents Training Project" in Jiangsu Province of China (No.BRA2016111),the Qing Lan Project of Jiangsu Higher Education,the Science and Technology Program of Changzhou (No.CE20175031),the Jiangsu Province Key R & D Projects (No.BE2016200),and the High-Tech Key Laboratory of Changzhou (No.CM20173003). （No.BRA2016111）

半导体学报（英文版）

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ISSN：1674-4926

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