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Model of NBTI combined with mobility degradation

Xuezhong Wu Chenyue Ma Shucheng Gao Xiangbin Li Fu Sun Lining Zhang Xinnan Lin

半导体学报(英文版)2018,Vol.39Issue(12):141-146,6.
半导体学报(英文版)2018,Vol.39Issue(12):141-146,6.DOI:10.1088/1674-4926/39/12/124015

Model of NBTI combined with mobility degradation

Model of NBTI combined with mobility degradation

Xuezhong Wu 1Chenyue Ma 1Shucheng Gao 1Xiangbin Li 1Fu Sun 1Lining Zhang 2Xinnan Lin1

作者信息

  • 1. The Shenzhen Key Lab of Advanced Electron Device and Integration,ECE,PKUSZ,Shenzhen 518060,China
  • 2. College of Electronic Science and Technology,Shenzhen University,Shenzhen 518060,China
  • 折叠

摘要

关键词

NBTI/mobility degradation/aging simulation algorithm/hot carrier injection/self-heating effect/coupling

Key words

NBTI/mobility degradation/aging simulation algorithm/hot carrier injection/self-heating effect/coupling

引用本文复制引用

Xuezhong Wu,Chenyue Ma,Shucheng Gao,Xiangbin Li,Fu Sun,Lining Zhang,Xinnan Lin..Model of NBTI combined with mobility degradation[J].半导体学报(英文版),2018,39(12):141-146,6.

基金项目

Project supported by the Shenzhen Science and Technology Project (Nos.ZDSYS201703031405137,JCYJ20170810163407761,(JCYJ20170818114156474),the PhD Start-up Fund of Natural Science Foundation of Guangdong Province (No.2015A030310499),and the China Postdoctoral Science Foundation Funded Project (No.2015T80023). (Nos.ZDSYS201703031405137,JCYJ20170810163407761,(JCYJ20170818114156474)

半导体学报(英文版)

OACSCDCSTPCD

1674-4926

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