首页|期刊导航|半导体学报（英文版）|An 8-18 GHz power amplifier with novel gain fluctuation compensation technique in 65 nm CMOS

An 8-18 GHz power amplifier with novel gain fluctuation compensation technique in 65 nm CMOS

Jie Gong Wei Li Jintao Hu Jiao Ye Tao Wang

半导体学报（英文版）2018，Vol.39Issue(12)：201-207,7.

半导体学报（英文版）2018，Vol.39Issue(12)：201-207,7.DOI:10.1088/1674-4926/39/12/125008

An 8-18 GHz power amplifier with novel gain fluctuation compensation technique in 65 nm CMOS

Jie Gong ¹Wei Li ¹Jintao Hu ¹Jiao Ye ¹Tao Wang¹

作者信息

1. State Key Laboratory of ASIC & System,Fudan University,Shanghai 201203,China
折叠

摘要

关键词

CMOS/wideband power amplifier/X-Ku-band/gain flatness

Key words

CMOS/wideband power amplifier/X-Ku-band/gain flatness

引用本文复制引用

Jie Gong,Wei Li,Jintao Hu,Jiao Ye,Tao Wang..An 8-18 GHz power amplifier with novel gain fluctuation compensation technique in 65 nm CMOS[J].半导体学报（英文版）,2018,39(12):201-207,7.

基金项目

Project supported partly by the National Natural Science Foundation of China (No.60123456) and partly by the National 13th Five-Year Project. （No.60123456）

半导体学报（英文版）

OACSCDCSTPCD

ISSN：1674-4926

访问量0

下载量0

段落导航