首页|期刊导航|半导体学报（英文版）|Optimization of cleaning process parameters to remove abrasive particles in post-Cu CMP cleaning
半导体学报（英文版）2018，Vol.39Issue(12)：212-217,6.DOI:10.1088/1674-4926/39/12/126002
Optimization of cleaning process parameters to remove abrasive particles in post-Cu CMP cleaning
Optimization of cleaning process parameters to remove abrasive particles in post-Cu CMP cleaning
摘要
关键词
CMP cleaning/abrasive particles/process parameter/surface roughnessKey words
CMP cleaning/abrasive particles/process parameter/surface roughness引用本文复制引用
Liu Yang,Baimei Tan,Yuling Liu,Baohong Gao,Chunyu Han..Optimization of cleaning process parameters to remove abrasive particles in post-Cu CMP cleaning[J].半导体学报（英文版）,2018,39(12):212-217,6.基金项目
Project supported by the Major National Science and Technology Special Projects (No.2016ZX02301003-004-007),the Natural Science Foundation of China (No.61704046),the Scientific Innovation Grant for Excellent Young Scientists of Hebei University of Technology (No.2015007),and the Hebei Natural Science Foundation Project (No.F2018202174). （No.2016ZX02301003-004-007）
