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Growth and fundamentals of bulk β-Ga2O3 single crystals

H.F.Mohamed Changtai Xia Qinglin Sai Huiyuan Cui Mingyan Pan Hongji Qi

半导体学报（英文版）2019，Vol.40Issue(1)：8-17,10.

半导体学报（英文版）2019，Vol.40Issue(1)：8-17,10.DOI:10.1088/1674-4926/40/1/011801

Growth and fundamentals of bulk β-Ga2O3 single crystals

H.F.Mohamed ¹Changtai Xia ²Qinglin Sai ¹Huiyuan Cui ¹Mingyan Pan ¹Hongji Qi¹

作者信息

1. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
2. Physics Department, Faculty of Science, Sohag University, 82524, Sohag, Egypt
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摘要

关键词

β-Ga2O3/crystal structure/bulk crystal growth/applications

Key words

β-Ga2O3/crystal structure/bulk crystal growth/applications

引用本文复制引用

H.F.Mohamed,Changtai Xia,Qinglin Sai,Huiyuan Cui,Mingyan Pan,Hongji Qi..Growth and fundamentals of bulk β-Ga2O3 single crystals[J].半导体学报（英文版）,2019,40(1):8-17,10.

基金项目

This work is funded by the following grants:Chinese Academy of Sciences president's International Fellowship Initiative (Grant No.2018PE0033),National Natural Science Foundation of China (Grant No.51802327),Science and Technology Commission of Shanghai Municipality (No.18511110500),and Pre-research Fund Key Project (No.6140922010601). （Grant No.2018PE0033）

半导体学报（英文版）

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ISSN：1674-4926

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