首页|期刊导航|半导体学报（英文版）|Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material
半导体学报（英文版）2019，Vol.40Issue(1)：18-27,10.DOI:10.1088/1674-4926/40/1/011802
Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material
Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material
摘要
关键词
gallium oxide (Ga2O3)/ultra-wide bandgap semiconductor/power device/field effect transistor (FET)Key words
gallium oxide (Ga2O3)/ultra-wide bandgap semiconductor/power device/field effect transistor (FET)引用本文复制引用
Hang Dong,Huiwen Xue,Qiming He,Yuan Qin,Guangzhong Jian,Shibing Long,Ming Liu..Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material[J].半导体学报（英文版）,2019,40(1):18-27,10.基金项目
This work was supported by the National Natural Science Foundation of China (Nos.61521064,61522408,61574169,61334007,61474136,61574166),the Ministry of Science and Technology of China (Nos.2016YFA0201803,2016YFA0203800,2017YFB0405603),the Key Research Program of Frontier Sciences of Chinese Academy of Sciences (Nos.QYZDB-SSW-JSC048,QYZDY-SSW-JSC001),the Beijing Municipal Science and Technology Project (No.Z171100002017011),and the Opening Project of the Key Laboratory of Microelectronic Devices & Integration Technology,Institute of Microelectronics of Chinese Academy of Sciences （Nos.61521064,61522408,61574169,61334007,61474136,61574166）
