半导体学报（英文版）2019，Vol.40Issue(1)：28-46,19.DOI:10.1088/1674-4926/40/1/011803
A review of the most recent progresses of state-of-art gallium oxide power devices
A review of the most recent progresses of state-of-art gallium oxide power devices
Hong Zhou 1Jincheng Zhang 1Chunfu Zhang 1Qian Feng 1Shenglei Zhao 1Peijun Ma 1Yue Hao1
作者信息
- 1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
- 折叠
摘要
关键词
gallium oxide/power electronics/power devicesKey words
gallium oxide/power electronics/power devices引用本文复制引用
Hong Zhou,Jincheng Zhang,Chunfu Zhang,Qian Feng,Shenglei Zhao,Peijun Ma,Yue Hao..A review of the most recent progresses of state-of-art gallium oxide power devices[J].半导体学报（英文版）,2019,40(1):28-46,19.
