首页|期刊导航|半导体学报（英文版）|A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism
半导体学报（英文版）2019，Vol.40Issue(1)：47-57,11.DOI:10.1088/1674-4926/40/1/011804
A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism
A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism
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β-Ga2O3/crystal defects/device performance/formation mechanismKey words
β-Ga2O3/crystal defects/device performance/formation mechanism引用本文复制引用
Bo Fu,Zhitai Jia,Wenxiang Mu,Yanru Yin,Jian Zhang,Xutang Tao..A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism[J].半导体学报（英文版）,2019,40(1):47-57,11.基金项目
We gratefully acknowledge the Financial support from the National key Research and Development Program of China (Nso.2018YFB0406502,2016YFB1102201),the National Natural Science Foundation of China (Grant No.51321091),the key Research and Development Program of Shandong Province (No.2018CXGC0410),the Young Scholars Program of Shandong University (No.2015WLJH36),and the 111 Project 2.0 (No.BP2018013). （Nso.2018YFB0406502,2016YFB1102201）
