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Application of halide vapor phase epitaxy for the growth of ultrawide band gap Ga2O3

Xiangqian Xiu Liying Zhang Yuewen Li Zening Xiong Rong Zhang Youdou Zheng

半导体学报（英文版）2019，Vol.40Issue(1)：58-64,7.

半导体学报（英文版）2019，Vol.40Issue(1)：58-64,7.DOI:10.1088/1674-4926/40/1/011805

Application of halide vapor phase epitaxy for the growth of ultrawide band gap Ga2O3

Xiangqian Xiu ¹Liying Zhang ¹Yuewen Li ¹Zening Xiong ¹Rong Zhang ¹Youdou Zheng¹

作者信息

1. Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
折叠

摘要

关键词

halide vapor phase epitaxy/Ga2O3/Schottky barrier diodes/epitaxy growth

Key words

halide vapor phase epitaxy/Ga2O3/Schottky barrier diodes/epitaxy growth

引用本文复制引用

Xiangqian Xiu,Liying Zhang,Yuewen Li,Zening Xiong,Rong Zhang,Youdou Zheng..Application of halide vapor phase epitaxy for the growth of ultrawide band gap Ga2O3[J].半导体学报（英文版）,2019,40(1):58-64,7.

基金项目

This work was supported by the National Key R&D Program of China (No.2017YFB0404201),the Solid State Lighting and Energy-Saving Electronics Collaborative Innovation Center,PAPD,and the State Grid Shandong Electric Power Company. （No.2017YFB0404201）

半导体学报（英文版）

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ISSN：1674-4926

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