半导体学报（英文版）2019，Vol.40Issue(1)：65-71,7.DOI:10.1088/1674-4926/40/1/012801
Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates
Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates
Tsung-Han Yang 1Houqiang Fu 1Hong Chen 1Xuanqi Huang 1Jossue Montes 1Izak Baranowski 1Kai Fu 1Yuji Zhao1
作者信息
- 1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, USA
- 折叠
摘要
关键词
gallium oxide/Schottky barrier diode/power electronics/wide bandgap materialKey words
gallium oxide/Schottky barrier diode/power electronics/wide bandgap material引用本文复制引用
Tsung-Han Yang,Houqiang Fu,Hong Chen,Xuanqi Huang,Jossue Montes,Izak Baranowski,Kai Fu,Yuji Zhao..Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates[J].半导体学报（英文版）,2019,40(1):65-71,7.
