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β-Ga2O3 thin film grown on sapphire substrate by plasmaassisted molecular beam epitaxy

Jiaqi Wei Xuelin Yang Fujun Xu Jing Yang Bo Shen Xinqiang Wang Kumsong Kim Fang Liu Ping Wang Xiantong Zheng Zhaoying Chen Ding Wang Ali Imran Xin Rong

半导体学报（英文版）2019，Vol.40Issue(1)：72-77,6.

半导体学报（英文版）2019，Vol.40Issue(1)：72-77,6.DOI:10.1088/1674-4926/40/1/012802

β-Ga2O3 thin film grown on sapphire substrate by plasmaassisted molecular beam epitaxy

Jiaqi Wei ¹Xuelin Yang ¹Fujun Xu ¹Jing Yang ¹Bo Shen ¹Xinqiang Wang ¹Kumsong Kim ¹Fang Liu ¹Ping Wang ¹Xiantong Zheng ¹Zhaoying Chen ¹Ding Wang ¹Ali Imran ¹Xin Rong¹

作者信息

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
折叠

摘要

关键词

β-Ga2O3/sapphire substrate/PA-MBE/crystalline quality/CL measurement

Key words

β-Ga2O3/sapphire substrate/PA-MBE/crystalline quality/CL measurement

引用本文复制引用

Jiaqi Wei,Xuelin Yang,Fujun Xu,Jing Yang,Bo Shen,Xinqiang Wang,Kumsong Kim,Fang Liu,Ping Wang,Xiantong Zheng,Zhaoying Chen,Ding Wang,Ali Imran,Xin Rong..β-Ga2O3 thin film grown on sapphire substrate by plasmaassisted molecular beam epitaxy[J].半导体学报（英文版）,2019,40(1):72-77,6.

基金项目

This work was supported by the National Key R&D Program of China (No.2018YFB0406502) and the National Natural Science Foundation of China (NOS.61734001,61521004). （No.2018YFB0406502）

半导体学报（英文版）

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ISSN：1674-4926

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