红外与毫米波学报2018，Vol.37Issue(6)：668-672,5.DOI:10.11972/j.issn.1001-9014.2018.06.005
基于肖特基电流输运模型和扫描分布电阻显微术的窄量子阱载流子浓度表征
2D-carrier profiling in narrow quantum wells by a Schottky's current transport model based on scanning spreading resistance microscopy
摘要
Abstract
Current studies on the relationship between carrier concentration in nano-scale semiconductor structure and its local conductance is mainly on parameters fitting.For above connection,existing models rely on artificial fitting parameters such as ideal factor.For above reason,derivation of carrier concentration though measured local conductance can not be done.In this work,we present a scheme to obtain the carrier concentration in narrow quantum wells (QWs).Cross-sectional scanning spreading resistance microscopy (SSRM) provides unparalleled spatial resolution (＜ 10 nm,Capable of characterizing single QW layer) in electrical characterization.High-resolution local conductance has been measured by SSRM on molecular beam epitaxy-grown GaAs/AlGaAs QWs cleaved surface (110).Based on our experimental set-up,a model which describes conductance by the only argument,i.e.carrier concentration has been built.Using the model,our implementation derived carrier concentration from SSRM measured local conductance in GaAs/AlGaAs QWs (doping level:1016/cm3-1018/cm3).Relative errors of the results are within 30％.关键词
载流子浓度/量子阱/扫描分布电阻显微术/肖特基Key words
carrier concentration/quantum wells/scanning spreading resistance microscopy/Schottky分类
数理科学引用本文复制引用
黄文超,王晓芳,陈效双,薛玉雄,杨生胜..基于肖特基电流输运模型和扫描分布电阻显微术的窄量子阱载流子浓度表征[J].红外与毫米波学报,2018,37(6):668-672,5.基金项目
Supported by China Aerospace Science and Technology Corporation Research and Development Innovation Project (YJI0410),the Fund of Shanghai Science and Technology Foundation (16ZR1447400),the National Key Research and Development Program of China (2016YFB0501303) （YJI0410）
