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基于绝缘体上硅材料的25通道200GHz的阵列波导光栅

袁配 王玥 吴远大 刘丽杰 安俊明 胡雄伟

红外与毫米波学报2018,Vol.37Issue(6):673-678,6.
红外与毫米波学报2018,Vol.37Issue(6):673-678,6.DOI:10.11972/j.issn.1001-9014.2018.06.006

基于绝缘体上硅材料的25通道200GHz的阵列波导光栅

25-channel 200 GHz AWG based on SOI ridge waveguides

袁配 1王玥 2吴远大 1刘丽杰 1安俊明 2胡雄伟1

作者信息

  • 1. 中国科学院半导体研究所集成光电子学国家重点实验室,北京100083
  • 2. 中国科学院大学材料科学与光电技术学院,北京100049
  • 折叠

摘要

Abstract

A SOI-based 25-channel AWG with 200 GHz channel spacing is demonstrated.The minimum distance between the input waveguides (Δxi)/output waveguides (Δxo)/arrayed waveguides (d) is optimized respectively.Then the boundary structures between the free propagation regions (FPRs) and the arrayed waveguides (W2/L2/L3) are optimized in detail.The experiment results show that the insertion loss of the AWG is 5 ~ 7 dB,and the crosstalk of it is 13 ~ 15 dB.Compared with our previous work,the performance of AWG in this paper has been improved greatly,and further methods to improve the performances of insertion loss and crosstalk have been proposed as well.

关键词

硅基光电子/阵列波导光栅/双刻蚀结构/波分复用/解复用器

Key words

silicon photonics/arrayed waveguide gratings/double-etch structure/wavelength division multiplexing/de-multiplexer

分类

信息技术与安全科学

引用本文复制引用

袁配,王玥,吴远大,刘丽杰,安俊明,胡雄伟..基于绝缘体上硅材料的25通道200GHz的阵列波导光栅[J].红外与毫米波学报,2018,37(6):673-678,6.

基金项目

Supported by National Key R&D Program of China (2016YFB0402504) (2016YFB0402504)

红外与毫米波学报

OA北大核心CSCDCSTPCD

1001-9014

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