红外与毫米波学报2018，Vol.37Issue(6)：679-682,687,5.DOI:10.11972/j.issn.1001-9014.2018.06.007
InAs/AlSb异质结的Pd/Ti/Pt/Au合金化欧姆接触
Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer
摘要
Abstract
In order to achieve low contact resistances of InAs/AlSb heterostructures with the undoped InAs cap layer,Pd/Ti/Pt/Au alloyed ohmic contact has been investigated.The contact resistance Rc is evaluated by using transmission-line-model (TLM) measurements.A minimum of 0.128 Ω · mm has been obtained by using the optimal rapid thermal annealing (RTA) with the condition at temperature of 275 ℃ and annealing time of 20 s.The measurement from transmission electron microscopy (TEM) demonstrates that the Pd atoms diffuses into the semiconductor,which is beneficial to the formation of a high-quality ohmic contact during the rapid thermal annealing.This study shows that the contact resistance Rc is reduced significantly after Pd/Ti/Pt/Au alloyed ohmic contact,which is suitable for its application in InAs/AlSb heterostructures.关键词
欧姆接触/快速热退火/InAs/AlSb异质结Key words
Ohmic contacts/rapid thermal annealing/InAs/AlSb heterostructures分类
信息技术与安全科学引用本文复制引用
张静,吕红亮,倪海桥,牛智川,张义门,张玉明..InAs/AlSb异质结的Pd/Ti/Pt/Au合金化欧姆接触[J].红外与毫米波学报,2018,37(6):679-682,687,5.基金项目
Supported by Advanced Research Foundation of China (914xxx803-051xxx111),National Defense Advanced Research project (315xxxxx301),and National Defense Innovation Program (48xx4) （914xxx803-051xxx111）
