红外与毫米波学报2018，Vol.37Issue(6)：683-687,5.DOI:10.11972/j.issn.1001-9014.2018.06.008
InAlAs/InGaAs/InP基PHEMTs小信号建模及低噪声应用
Small signal model and low noise application of InAlAs/InGaAs/InP-based PHEMTs
摘要
Abstract
This paper presents an improved small-signal model and a W-band monolithic low noise amplifier (LNA) using 100 nm InAlAs/InGaAs/InP-based high electron mobility transistors (HEMT) technology.For improving the fitting accuracy of S-parameters in low frequency,the small-signal model takes into account differential resistances of gate-to-source and gate-to-drain diodes,which modeled by resistances Rfs and Rfd.A W-band LNA monolithic millimeter-wave integrated circuit (MMIC) has been designed and fabricated based on this model to verify the feasibility of this model.The amplifier is measured on-wafer with a small-signal peak gain of 14.4 dB at 92.5 GHz and 3-dB bandwidth from 85 to 110 GHz.In addition,the MMIC also exhibits an excellent noise characteristic with the noise figure of 4.1 dB and the associate gain of 13.8 dB at 88 GHz.This MMIC amplifier shows wider 3-dB bandwidth and higher per-stage gain than others results at the similar band.关键词
InAlAs/InGaAs/InP/赝高电子迁移率晶体管(PHEMTs)/小信号模型/毫米波和亚毫米波/单片微波集成电路(MMIC)/低噪声放大器Key words
InAlAs/InGaAs/InP/pseudomorplic high electronic mobility transistor (PHEMTs)/small-signal model/millimeter and submillimeter/monolithic millimeter-wave integrated circuit (MMIC)/low noise amplifier(LNA)分类
数理科学引用本文复制引用
刘军,于伟华,杨宋源,侯彦飞,崔大胜,吕昕..InAlAs/InGaAs/InP基PHEMTs小信号建模及低噪声应用[J].红外与毫米波学报,2018,37(6):683-687,5.基金项目
Supported by National Natural Science Foundation of China (61771057) （61771057）
