红外与毫米波学报2018，Vol.37Issue(6)：688-692,5.DOI:10.11972/j.issn.1001-9014.2018.06.009
110GHz铟磷异质结双极晶体管小信号模型参数提取方法
An approach to determine small-signal model parameters for InP HBT up to 110 GHz
摘要
Abstract
An approach for determination of small-signal equivalent circuit model elements for InP HBT is presented in this paper.The skin effect of the feedlines is taken into account in the proposed model.This method combines the analytical approach and empirical optimization procedure.The intrinsic elements determined by a conventional analytical parameter transformation technique are described as function of extrinsic resistances.An excellent fit between measured and simulated S-parameters in the frequency range of 2 ～ 110 GHz is obtained for InP HBT.关键词
等效电路模型/异质结双极晶体管/器件建模Key words
equivalent circuits/heterojunction bipolar transistor(HBT)/device modeling分类
信息技术与安全科学引用本文复制引用
张傲,张译心,王博冉,高建军..110GHz铟磷异质结双极晶体管小信号模型参数提取方法[J].红外与毫米波学报,2018,37(6):688-692,5.基金项目
Supported by National Natural Science Foundation of China (61774058) （61774058）
