红外与毫米波学报2018，Vol.37Issue(6)：693-698,6.DOI:10.11972/j.issn.1001-9014.2018.06.010
超薄氧化铝层的电场调制效应
Study on the electric field modulation effect of ultrathin alumina layer
摘要
Abstract
The characteristics and mechanism of set/reset process in high-k based resistive random-access memory devices were studied.A great fluctuation in set/reset voltages was observed in the NbA1O single-layer RRAM devices.However,it shows highly uniform and reproducible switching cycles in A12 O3/NbA1O/A12 O3 nanolaminate stack structures.Based on the electric-filed modulating effect,we proposed a unified resistive switching model to simulate the set and reset operations,and the switch parameters dispersion due to the great randomness of the conductive spots formation or annihilation was discussed for a single-layer RRAM.When an ultra-thin Al2O3 films was embedded in NbA1O-based RRAM devices,there is an obvious improvement in the stabilization of the set/reset switching voltages.It can be explained that the electric-field distribution is rearranged and locally controlled in the stack structure,therefore the conductive filament bridges and ruptures appear in the thin buffer layer.关键词
电场调制/阻变存储器/原子层沉积Key words
electric-filed modulating effect/resistive random access memory (RRAM)/atomic layer deposition分类
信息技术与安全科学引用本文复制引用
徐大朋,程佩红,陈琳,张卫..超薄氧化铝层的电场调制效应[J].红外与毫米波学报,2018,37(6):693-698,6.基金项目
Supported by National Natural Science Foundation of China (61376092,61076114,61106108,51172046),Specialized Research Fund for the Doctoral Program of Higher Education (20110071130005) （61376092,61076114,61106108,51172046）
