红外与毫米波学报2018，Vol.37Issue(6)：699-703,710,6.DOI:10.11972/j.issn.1001-9014.2018.06.011
InP衬底上InAlAs异变缓冲层和高铟组分InGaAs的生长温度优化
Optimization of growth temperatures for InAlAs metamorphic buffers and high indium InGaAs on InP substrate
摘要
Abstract
In0.83Ga0.17As layers were grown on InP substrate with InAlAs metamorphic buffers by gas source molecular beam epitaxy.The characteristics of InGaAs and InA1As layers grown with different temperature schemes were investigated by high resolution X-ray diffraction reciprocal space maps,atomic force microscopy,photoluminescence and Hall-effect measurements.Results show that a higher growth temperature gradient of the InAlAs metamorphic buffers leads to a broader (004) reflection peak.The tilt angle between the epilayer and the substrate increases as well.The surface of the buffer layer becomes rougher.It indicates that the material defects increase and lattice relaxation becomes insufficient.In0.83Ga0.17As layers were grown on the InAlAs metamorphic buffer with a fixed growth temperature gradient.A higher growth temperature leads to a moderate full width at half maximum along the Qx direction of the (004) reflection,a stronger photoluminescence at 77 K,but a rougher surface of In0.83Ga0.17As.This indicates that the material defects can be suppressed at higher growth temperatures.关键词
分子束外延/InGaAs/InAlAs异变缓冲层/生长温度Key words
molecular beam epitaxy/InGaAs/InAlAs metamorphic buffer/growth temperature分类
信息技术与安全科学引用本文复制引用
张见,陈星佑,顾溢,龚谦,黄卫国,杜奔,黄华,马英杰,张永刚..InP衬底上InAlAs异变缓冲层和高铟组分InGaAs的生长温度优化[J].红外与毫米波学报,2018,37(6):699-703,710,6.基金项目
Supported by the National Key Research and Development Program of China (2016YFB0402400),National Natural Science Foundation of China (61775228,61675225,and 61605232),and the Shanghai Rising-Star Program (17QA1404900) （2016YFB0402400）
