半导体学报（英文版）2019，Vol.40Issue(2)：35-40,6.DOI:10.1088/1674-4926/40/2/022802
2D study of AlGaN/AlN/GaN/AlGaN HEMTs' response to traps
2D study of AlGaN/AlN/GaN/AlGaN HEMTs' response to traps
A.Hezabra 1N.A.Abdeslam 1N.Sengouga 1M.C.E.Yagoub2
作者信息
- 1. Laboratory of Metallic and Semiconducting Materials(LMSM), Mohammed Khider University, Biskra, Algeria
- 2. School of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, ON, Canada
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摘要
关键词
AlGaN HEMT/AlGAN/AlN/GaN structure, silicon substrate/Silvaco/trapping effects/channel trapsKey words
AlGaN HEMT/AlGAN/AlN/GaN structure, silicon substrate/Silvaco/trapping effects/channel traps引用本文复制引用
A.Hezabra,N.A.Abdeslam,N.Sengouga,M.C.E.Yagoub..2D study of AlGaN/AlN/GaN/AlGaN HEMTs' response to traps[J].半导体学报（英文版）,2019,40(2):35-40,6.
