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Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal-insulator-semiconductor transistors

Shuxin Tan Takashi Egawa

半导体学报（英文版）2019，Vol.40Issue(4)：45-49,5.

半导体学报（英文版）2019，Vol.40Issue(4)：45-49,5.DOI:10.1088/1674-4926/40/4/042801

Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal-insulator-semiconductor transistors

Shuxin Tan ¹Takashi Egawa²

作者信息

1. School of Electronics and Information, Nantong University, Nantong 226019, China
2. Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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摘要

关键词

AlGaN/GaN MIS-HEMTs/sputtering deposition/electron-beam evaporation/silicon oxide/electrical properties

Key words

AlGaN/GaN MIS-HEMTs/sputtering deposition/electron-beam evaporation/silicon oxide/electrical properties

引用本文复制引用

Shuxin Tan,Takashi Egawa..Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal-insulator-semiconductor transistors[J].半导体学报（英文版）,2019,40(4):45-49,5.

基金项目

This work was partly supported by the National Science Foundation of China (No.61504071). （No.61504071）

半导体学报（英文版）

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ISSN：1674-4926

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