半导体学报（英文版）2019，Vol.40Issue(5)：35-39,5.DOI:10.1088/1674-4926/40/5/052401
Research for radiation-hardened high-voltage SOI LDMOS
Research for radiation-hardened high-voltage SOI LDMOS
Yanfei Li 1Shaoli Zhu 1Jianwei Wu 1Genshen Hong 1Zheng Xu1
作者信息
- 1. The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214035, China
- 折叠
摘要
关键词
radiation-hardened/RGS/total ion dose/threshold voltage shiftKey words
radiation-hardened/RGS/total ion dose/threshold voltage shift引用本文复制引用
Yanfei Li,Shaoli Zhu,Jianwei Wu,Genshen Hong,Zheng Xu..Research for radiation-hardened high-voltage SOI LDMOS[J].半导体学报（英文版）,2019,40(5):35-39,5.
