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Magneto-transport properties of the off-stoichiometric Co2MnAl film epitaxially grown on GaAs (001)

Zhifeng Yu Hailong Wang Jialin Ma Shucheng Tong Jianhua Zhao

半导体学报（英文版）2019，Vol.40Issue(5)：44-47,4.

半导体学报（英文版）2019，Vol.40Issue(5)：44-47,4.DOI:10.1088/1674-4926/40/5/052501

Magneto-transport properties of the off-stoichiometric Co2MnAl film epitaxially grown on GaAs (001)

Zhifeng Yu ¹Hailong Wang ²Jialin Ma ¹Shucheng Tong ²Jianhua Zhao¹

作者信息

1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100190, China
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摘要

关键词

full-Heusler alloy/magneto-transport property/activation model/molecular-beam epitaxy

Key words

full-Heusler alloy/magneto-transport property/activation model/molecular-beam epitaxy

引用本文复制引用

Zhifeng Yu,Hailong Wang,Jialin Ma,Shucheng Tong,Jianhua Zhao..Magneto-transport properties of the off-stoichiometric Co2MnAl film epitaxially grown on GaAs (001)[J].半导体学报（英文版）,2019,40(5):44-47,4.

基金项目

This work was supported by the Ministry of Science and Technology under Grant Nos.2015CB921500,2017YFB0405 701 and the National Natural Science Foundation of China under Grant Nos.U1632264 and 11704374. （）

半导体学报（英文版）

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ISSN：1674-4926

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