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A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge

Xiaorong Luo Tian Liao Jie Wei Jian Fang Fei Yang Bo Zhang

半导体学报（英文版）2019，Vol.40Issue(5)：63-68,6.

半导体学报（英文版）2019，Vol.40Issue(5)：63-68,6.DOI:10.1088/1674-4926/40/5/052803

A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge

Xiaorong Luo ¹Tian Liao ¹Jie Wei ¹Jian Fang ¹Fei Yang ²Bo Zhang¹

作者信息

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
2. Global Energy Interconnection Research Institute, Beijing 102209, China
折叠

摘要

关键词

SiC trench MOSFET/reverse transfer capacitance/gate-drain charge/figure of merit

Key words

SiC trench MOSFET/reverse transfer capacitance/gate-drain charge/figure of merit

引用本文复制引用

Xiaorong Luo,Tian Liao,Jie Wei,Jian Fang,Fei Yang,Bo Zhang..A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge[J].半导体学报（英文版）,2019,40(5):63-68,6.

基金项目

This work was supported by the National Key Research and Development Program of China (No.2016YFB0400502). （No.2016YFB0400502）

半导体学报（英文版）

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ISSN：1674-4926

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