重庆邮电大学学报（自然科学版）2019，Vol.31Issue(1)：80-88,9.DOI:10.3979/j.issn.1673-825X.2019.01.011
基于GaN器件的平衡式逆F类功率放大器的研究与设计
Research and design of the balanced inverse class-F power amplifier based on GaN devices
摘要
Abstract
In order to deal with low efficiency and large input/output return loss of power amplifier, a 2.6 GHz balanced inverse Class F power amplifier test circuit based on GaN device CGH40010 F was designed. According to the approximated equivalent network of output parasitics, the load impedances are transferred into the package plane, the second and third harmonic are suppressed in the output matching circuit. Taking into account the effect of the gate source parasitic capacitance on the input signal, the second harmonic suppression circuit is added into the input topology to further enhance the efficiency of the power amplifier. Meanwhile, the circuit size is smaller and compact by utilizing microstrip radial stub in the bias circuit. By making simulation and optimization, the power amplifier circuit board is made of Rogers4350 b.The measure results demonstrate that the PA provides saturated output power of 42.32 d Bm with maximum PAE of 72.16％ and maximum drain efficiency of 77.91％, input and output standing wave ratio is less than 2. Experimental results are in good agreement with the simulation results, which confirmed feasibility of design methodology.关键词
平衡结构/逆F类功率放大器/GaN/谐波抑制/驻波系数Key words
balanced structure/inverse class F power amplifier/GaN/harmonic suppression/voltage standing wave ratio (VSWR)分类
信息技术与安全科学引用本文复制引用
南敬昌,张鹏俊,高明明,李蕾..基于GaN器件的平衡式逆F类功率放大器的研究与设计[J].重庆邮电大学学报（自然科学版）,2019,31(1):80-88,9.基金项目
国家自然科学基金 (61372058) （61372058）
辽宁省高校重点实验室项目 (LJZS007) （LJZS007）
