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无片上电感的低功耗高线性度CMOS混频器

文枭鹏 张为 刘艳艳

重庆邮电大学学报(自然科学版)2019,Vol.31Issue(1):89-94,6.
重庆邮电大学学报(自然科学版)2019,Vol.31Issue(1):89-94,6.DOI:10.3979/j.issn.1673-825X.2019.01.012

无片上电感的低功耗高线性度CMOS混频器

An inductorless low power high linearity CMOS mixer

文枭鹏 1张为 1刘艳艳2

作者信息

  • 1. 天津大学 微电子学院,天津 300072
  • 2. 南开大学 电子信息与光学工程学院,天津 300071
  • 折叠

摘要

Abstract

The number of internet of things (IOT) devices is expected to increase rapidly in the near future. Prolonging battery life and improving signal dynamic range of RF front end of the communication system are the major concerns for IOT applications. In order to solve the problem of RF power consumption and linearity, a novel Gilbert mixer is proposed. Compared with the conventional Gilbert mixer, the proposed mixer utilizes subthreshold PMOS/NMOS complementary structure at the transconductance stage and combines the current reuse and derivative superposition technologies, realizing a trade-off between power consumption and linearity. The mixer also employs two cross-coupling capacitors to generate the negative impedance which cancels parasitic capacitance, achieving high linearity with low power consumption. Implemented in HHNEC0.18 μm Bi CMOS process, the post simulation results show that the mixer has a gain of 6.2 ~ 7.6 d B from 0.4 GHz to 3 GHz and a IIP3 of 14.96 d Bm at 2.4 GHz while having a power consumption of 1.8 m W from 1 V supply voltage. The mixer core circuit size is 460 μm × 190 μm. Compared with other work, the mixer has the advantages of low power consumption and high linearity.

关键词

混频器/负阻抗/导数叠加/低功耗/高线性度

Key words

mixer/negative impedance/derivative superposition/low power/high linearity

分类

信息技术与安全科学

引用本文复制引用

文枭鹏,张为,刘艳艳..无片上电感的低功耗高线性度CMOS混频器[J].重庆邮电大学学报(自然科学版),2019,31(1):89-94,6.

基金项目

国家重点研发计划 (2016YFE0100400) (2016YFE0100400)

重庆邮电大学学报(自然科学版)

OA北大核心CSCDCSTPCD

1673-825X

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