电波科学学报2019，Vol.34Issue(1)：133-138,6.DOI:10.13443/j.cjors.2018081501
DMSO掺杂PEDOT:PSS薄膜太赫兹波段介电性能研究
Dielectric properties of DMSO-doped-PEDOT: PSS in the THz range
摘要
Abstract
Poly (3, 4-ethylenedioxythiophene):poly (4-styrenesulfonate) (PEDOT:PSS) is a promising candidate for terahertz (THz) devices. Its dielectric properties can be changed by the dopant dimethylsulfoxide (DMSO). In this study, the dielectric properties of DMSO-doped-PEDOT:PSS films were investigated using terahertz time-domain spectroscopy (THz-TDS) measurements. The values of the carrier density and mobility were also determined by fitting the dielectric permittivity to the Drude-Smith model. The properties of PEDOT:PSS films can be changed by adjusting the doping concentration. When the doping concentration is increased to 15 vol％, the film exhibits metal characteristics, while the pristine and low-doped film still exhibits semiconductor characteristics.关键词
太赫兹/有机材料/PEDOT:PSS/介电性能/薄膜材料Key words
terahertz/organic materials/PEDOT:PSS/dielectric properties/thin films分类
数理科学引用本文复制引用
都妍,武亚君,张元,霍熠炜..DMSO掺杂PEDOT:PSS薄膜太赫兹波段介电性能研究[J].电波科学学报,2019,34(1):133-138,6.基金项目
上海市科学技术委员会优秀技术带头人计划项目 (NO.16XD1423300) （NO.16XD1423300）
