电器与能效管理技术Issue(3)：25-29,49,6.DOI:10.16628/j.cnki.2095-8188.2019.03.005
SiC MOSFET SPICE模型的建立与仿真分析
Establishment and Simulation Analysis of SiC MOSFET SPICE Model
摘要
Abstract
Compared with Si MOSFET, SiC MOSFET has many advantages such as high voltage resistance, high temperature resistance, fast frequency, etc., which has been widely used.The SPICE model is the basis for the simulation analysis of SiC-containing MOSFET circuits, and its research is very necessary.Taking the SPICE 1 model as an example, this paper introduced the modeling process of SiC MOSFET based on LTspice.Through the modeling of MOS, body diode and PCB parasitic parameters, the SiC MOSFET SPICE 1 model was established and the correctness of the established model was verified by the simulation comparison in this paper.关键词
SiC MOSFET/SPICE 1模型/仿真/LTspiceKey words
SiC MOSFET/SPICE 1 model/simulation/LTspice分类
信息技术与安全科学引用本文复制引用
叶雪荣,张开新,翟国富,丁新..SiC MOSFET SPICE模型的建立与仿真分析[J].电器与能效管理技术,2019,(3):25-29,49,6.基金项目
国家重点研发计划 (2017YFB1300800) （2017YFB1300800）
国家自然科学基金 (61671172) （61671172）
