桂林电子科技大学学报2018，Vol.38Issue(6)：442-447,6.
S波段低噪声放大器的设计
Design of a S band low noise amplifier
摘要
Abstract
In order to speed up the design process of the low noise amplifier.Basing on the microstrip impedance matching technique, a low noise amplifier used in 2.2～2.3 GHz is designed by using ADS software.HEMT ATF-34143 of Agilent Company was used in this amplifier system.A two-stage topology was used to reach the requirement of the noise coefficient and high gain.In order to improve efficiency of the design, combing the bias circuit design with stability design is proposed.The simulated results show that the gain of the amplifier is more than 23 dB, the noise figure is less than 0.6 dB, input and output VSWR of the amplifier is less than 1.2.关键词
低噪声放大器/ADS/高电子迁移率晶体管/稳定性设计Key words
low noise amplifier/ADS/HEMT/stability design分类
信息技术与安全科学引用本文复制引用
李占祥,岳宏卫,吴超飞,龚全熙..S波段低噪声放大器的设计[J].桂林电子科技大学学报,2018,38(6):442-447,6.基金项目
国家自然科学基金(11264009) （11264009）
桂林电子科技大学研究生教育创新计划(2016YJCX92) （2016YJCX92）
