中北大学学报（自然科学版）2019，Vol.40Issue(3)：243-249,256,8.DOI:10.3969/j.issn.1673-3193.2019.03.009
碳化硅表面结构对光催化活性的影响
Effect of Surface Structure of Silicon Carbide on Photocatalytic Activity
摘要
Abstract
Surface modification studies on SiC to improve photocatalytic performance were presented in this work.The surface of SiC was treated by chemical etching process to thin oxide layers.The surface configuration and chemical composition of SiC during the etching process were determined by XPS and FT-IR.The results show that the crystal structure, morphology and optical band gap did not change significantly.XPS and FT-IR results show that Si—C bonds on the SiC surface break and form new Si—O—Si bonds.Under the optimum optimal etching conditions and bias condition, i.e.bias voltage=±500 V, etching time=10 hand the concentration of NaOH=1 mol·L-1, about 45.9％and 80％ MB removal was achieved under UV irradiation and under UV irradiation and bias voltage, respectively.Compared with the unmodified SiC sample, SiC is chemically treated with NaOH solution to enhance photocatalytic activity and photoelectrocatalytic activity in the UV light region, and the photocatalytic efficiency is increased by 24 and 36 times.关键词
碳化硅/光电催化/化学浸蚀/表面改性Key words
SiC/photoelectrocatalysis/chemical etching process/surface modification分类
化学化工引用本文复制引用
郭雨,冯纪章,郭腾,陈君华,柏雷,周永生,叶祥桔,徐卫兵..碳化硅表面结构对光催化活性的影响[J].中北大学学报（自然科学版）,2019,40(3):243-249,256,8.基金项目
国家自然科学基金资助项目(21603002) （21603002）
安徽科技学院重点学科建设项目(AKZDXK/2015A01) （AKZDXK/2015A01）
安徽科技学院稳定高层次人才项目(AHSTU-SHTP201801) （AHSTU-SHTP201801）
