红外与毫米波学报2019,Vol.38Issue(1):27-31,43,6.DOI:10.11972/j.issn.1001-9014.2019.01.005
W波段InP DHBT宽带高功率压控振荡器
Fundamental W-band In P DHBT-based voltage-controlled oscillator with wide tuning range and high output power
摘要
Abstract
A fundamental W-band voltage-controlled oscillator ( VCO) featuring high output power and wide tuning range has been successfully designed. The VCO was fabricated utilizing 0. 8 μm InP DHBT technology. The DHBT exhibits peak fTof 170 GHz and fmaxof 250 GHz. The VCO core implemented a balanced Colpitts-type topology modified for high-frequency application. An additional buffer amplifier stage was connected with the core to further boost output power as well as eliminate the load pulling effect. The DHBT base-collector P-N junction at reverse bias was chosen as a varactor diode to realize a wide frequency tuning. The measured results demonstrate that the oscillation frequency of the proposed VCO can be tuned between 81 ~ 97. 3 GHz, which is a relative tuning bandwidth of 18. 3 %. Over this frequency range the oscillator has a maximum output power of 10. 2 dBm, and the power variation is less than 3. 5 dB. A phase noise of-88 dBc/Hz@ 1 MHz is obtained at the highest tuning frequency.关键词
压控振荡器/磷化铟双异质结晶体管/宽调谐范围/高输出功率Key words
voltage-controlled oscillator/InP DHBT/wide tuning range/high output power分类
信息技术与安全科学引用本文复制引用
王溪,姚鸿飞,苏永波,丁武昌,阿瑟夫,丁芃,童志航,金智..W波段InP DHBT宽带高功率压控振荡器[J].红外与毫米波学报,2019,38(1):27-31,43,6.基金项目
Supported by a key program of the National Natural Science Foundation of China(61434006) (61434006)