红外与毫米波学报2019，Vol.38Issue(1)：44-49,6.DOI:10.11972/j.issn.1001-9014.2019.01.008
磁控溅射制备纳米晶GZO/CdS双层膜及GZO/CdS/p-Si异质结光伏器件的研究
Preparation of nanocrystalline GZO/CdS bilayer films using magnetron sputtering and GZO/CdS/p-Si heterojunction photovoltaic device
摘要
Abstract
In this work, Ga doped ZnO ( GZO) /CdS bilayer films were prepared on p-Si substrate by magnetron sputtering to form GZO/CdS/p-Si heterojunction device. The structural, optical and electrical properies of the nanocrystalline GZO/CdS bilayer films were studied by XRD, SEM, XPS, UV-VIS spectrophotometer and Hall effect measurement. The J-V curve of GZO/CdS/p-Si heterojunction device shows good rectifying behavior. And the value of IF/IR ( IFand IRstand for forward and reverse current, respectively) at ± 3 V is found to be as high as21. The results indicate that the nanocrystalline GZO/CdS/p-Si heterojunction possesses good diode characteristic.High photocurrent density is obtained under a reverse bias. The nanocrystalline GZO/CdS/p-Si heterojunction device exhibits clear photovoltaic effect. Because the lattice constant of CdS is between GZO and Si, it can be used for a buffer layer between GZO and Si, to effectively reduce the interface states between GZO and p-Si. Therefore, we observed the clear photovoltaic effect of GZO/CdS/p-Si heterojunction.关键词
纳米晶GZO/CdS双层膜/磁控溅射/异质结/电流-电压 (Ⅰ-Ⅴ) 特性Key words
nanocrystalline GZO/CdS bilayer films/magnetron sputtering/heterojunction/current-voltage (Ⅰ-Ⅴ) characteristics分类
数理科学引用本文复制引用
何波,徐静,宁欢颇,邢怀中,王春瑞,张晓东,莫观孔,沈晓明..磁控溅射制备纳米晶GZO/CdS双层膜及GZO/CdS/p-Si异质结光伏器件的研究[J].红外与毫米波学报,2019,38(1):44-49,6.基金项目
Supported by Fund PLA General Armament Department"The 15th Five-year"weapons and Equipments Pre-research Field Fundation"Bas-ic application technology of graphene materials in batteries"(6140721040412) （6140721040412）
