聊城大学学报（自然科学版）2018，Vol.31Issue(4)：37-41,5.DOI:10.19728/j.issn1672-6634.2018.04.007
量子阱厚度和势垒掺杂对大功率AlGaInP LED发光效率衰减特性的影响
Effects of the QW Thickness and QB Doping on Efficiency Attenuation Characteristics of High Power LED AlGaInP
摘要
Abstract
Currently, GaAs based AlGaInP LED (Light emitting diode) is an international frontier and hotspot in the field of optoelectronic devices, and its stability and luminous efficiency have been improved obviously with increasingly mature industrial preparation technology.However, the attenuation of the luminous efficiency is still a very serious question for AlGaInP high power chip at high current.The known factors of effect are mainly the carrier overflow and Auger recombination enhancement.Relationship between changes in photoluminescence spectra with current density and radiation efficiency have been analyzed by the different QW (quantum well) thickness and QB (quantum barrier) doping concentration for AlGaInP LED.The high temperature attenuation is improved obviously for QB doping concentration at 1×1017 cm-3 and 20 nm QW thickness.关键词
大功率/AlGaInP/LED/俄歇复合/载流子溢出Key words
high power/AlGaInP/LED/auger recombination/carrier overflow分类
信息技术与安全科学引用本文复制引用
李玉强,刘超,柴永灏,牛萍娟,于莉媛,宁平凡..量子阱厚度和势垒掺杂对大功率AlGaInP LED发光效率衰减特性的影响[J].聊城大学学报（自然科学版）,2018,31(4):37-41,5.基金项目
国家自然科学基金项目 (11605145) （11605145）
天津市自然科学基金项目 (18JCQNJC03700, 15JCQNJC41800) （18JCQNJC03700, 15JCQNJC41800）
天津市教委科研计划项目-自然科学 (2018KJ210, 2017ZD06, 2018ZD15) （2018KJ210, 2017ZD06, 2018ZD15）
吉林大学超硬材料国家重点实验室开放课题项目 (201709) 资助 （201709）
