液晶与显示2018，Vol.33Issue(12)：996-1001,6.DOI:10.3788/YJYXS20183312.0996
一种新型a-IGZO TFT集成栅极驱动电路设计
Novel integrated gate driver design based on a-IGZO TFTs
摘要
Abstract
Reliability of conventional integrated gate driver decreased with amorphous InGaZnO thin film transistors (a-IGZO TFTs) employed, which is assumed to result from the threshold voltage shift.Accordingly, An improved integrated gate circuit was proposed, which exhibited larger redundancy for the threshold voltage shift by controlling the Q-point voltage stability of driver TFTs.It prevented the circuit failure due to threshold voltage shift (Vthshift margin enlarged from less than ±-3 V to ±-9 V) , made integrated gate driver more stable, and led to longer life of liquid crystal display panels.关键词
非晶铟镓锌氧 (a-IGZO)/薄膜晶体管 (TFT)/集成栅极驱动 (GIA)Key words
amorphous InGaZnO (a-IGZO)/thin film transistor (TFT)/gate driver in array (GIA)分类
信息技术与安全科学引用本文复制引用
徐宏霞,邹忠飞,董承远..一种新型a-IGZO TFT集成栅极驱动电路设计[J].液晶与显示,2018,33(12):996-1001,6.基金项目
国家自然科学基金(No.61474075) （No.61474075）
