云南民族大学学报（自然科学版）2019，Vol.28Issue(2)：203-208,6.DOI:10.3969/j.issn.1672-8513.2019.02.020
基于CMOS晶体管的太赫兹探测器研究进展
Research development of the terahertz detector based on the CMOS transistor
摘要
Abstract
With the wide application of terahertz wave, terahertz detection technology has become the focus of attention. Terahertz detectors are mainly composed of Schottky diodes, quantum-well diodes and the CMOS transistor. The CMOS transistor has good responsivity, good signal to the noise ratio and high equivalent power. First, this paper introduces the terahertz detector and its technical index. Second, it gives an overall review of the improvement of the CMOS transistor in its structure and materials in recent years. Third, it discusses the application of the CMOS transistor and predicts its future development.关键词
太赫兹探测器/CMOS晶体管/器件响应度/等效噪声功率Key words
terahertz detector/CMOS transistor/responsivity/equivalent noise power分类
信息技术与安全科学引用本文复制引用
付元旭,梁志茂,范菁,张广求,赵波..基于CMOS晶体管的太赫兹探测器研究进展[J].云南民族大学学报（自然科学版）,2019,28(2):203-208,6.基金项目
国家自然科学基金(6154063) （6154063）
云南省应用基础研究计划项目(2018FDO55) （2018FDO55）
