红外与毫米波学报2019，Vol.38Issue(2)：144-148,5.DOI:10.11972/j.issn.1001-9014.2019.02.003
D波段InP基高增益低噪声放大芯片的设计与实现
Design and realization of D-band InP MMIC amplifier with high-gain and low-noise
摘要
Abstract
In this paper,two D-band (110 ～ 170 GHz) monolithic millimeter-wave integrated circuit (MMIC) amplifiers have been designed and realized using 90-nm InAlAs/InGaAs/InP.high gain electron mobility transistors (HEMT) technology.The ampfifiers are developed in common source and microstrip technology.The three-stage MMIC amplifier A is designed based on device A and measured on wafer with a small-signal peak gain of 11.2 dB at 140 GHz and 3-dB-bandwidth is 16 GHz with a chip size of 2.6 mm × 1.2 mm.The two-stage MMIC amplifier B is designed based on device B and measured on wafer with a small-signal peak gain of 15.8 dB at 139 GHz and 3-dB-bandwidth is 12 GHz and the gain is higher than 10 dB from 130 GHz to 150 GHz with a chip size of 1.7 mm × 0.8 mm.The amplifier B also shows an excellent noise character with noise figure of 4.4 dB when the associated gain of 15 dB is acquired at 141 GHz and the average noise figure is about 5.2 dB over the bandwidth.The amplifier B exhibits a higher gain-per-stage,competitive gain-area ratio and lower noise figure.The successful realization of MMIC amplifiers is of great potential for receiver-front-end applications at D-band.关键词
InAlAs/InGaAs/InP/赝高电子迁移率晶体管(PHEMTs)/90 nm/单片微波集成电路(MMIC)/放大器/D波段Key words
InAlAs/InGaAs/InP/PHEMTs/90-nrn/MMIC/amplifiers/D-band分类
数理科学引用本文复制引用
刘军,吕昕,于伟华,杨宋源,侯彦飞..D波段InP基高增益低噪声放大芯片的设计与实现[J].红外与毫米波学报,2019,38(2):144-148,5.基金项目
Supported by National Natural Science Foundation of China (61771057) （61771057）
