红外与毫米波学报2019，Vol.38Issue(2)：149-153,5.DOI:10.11972/j.issn.1001-9014.2019.02.004
STI埋层的高光电流和低暗计数率单光子雪崩二极管
STI-bounded single-photon avalanche diode with high photo current and low dark rate
摘要
Abstract
A 0.18 μm CMOS process single photon avalanche diode (SPAD) was examined in this study in an effort to inhibit premature edge breakdown (PEB) and secure large photocurrent and low dark count rate (DCR).The SPAD consists of a p-well/deep n-well photosensitive junction and a guard ring as-formed by a deep n-well updiffused region and an edge STI.The size of the STI layer related to the light current and dark rate was determined via test.The results indicate that the photocurrent and dark count of the SPAD are optimal when the overlapping length between the STI and guard ring is 1 μm at room temperature.The SPAD with 10 μn diameter has high photon detection probability (PDP),wide spectral response,dark count rate as low as 208 Hz,and 20.8％ peak PDP when the wavelength is 510 nm.A 0.18 μn CMOS process single photon avalanche diode (SPAD) was examined in this study to inhibit premature edge breakdown (PEB) and secure large photocurrent and low dark count rate (DCR).The SPAD consists of a p-well/deep n-well photosensitive junction and a guard ring as-formed by a deep n-well up-diffused region and an edge STI.The size of the STI layer related to the light current and dark rate was determined via test.The results indicate that the photocurrent and dark count of the SPAD are optimal when the overlapping length between the STI and guard ring is 1 pm at room temperature.The SPAD with 10 μm diameter has high photon detection probability (PDP),wide spectral response,dark count rate as low as 208 Hz,and 20.8％ peak PDP when the wavelength is 510 nm.关键词
单光子雪崩二极管/边缘击穿/暗计数率/互补金属氧化物半导体/光子探测概率Key words
single-photon avalanche diode (SPAD)/premature edge breakdown (PEB)/dark count rate (DCR)/complementary metal oxide semiconductor (CMOS)/photon detection probability (PDP)分类
信息技术与安全科学引用本文复制引用
金湘亮,彭亚男,曾朵朵,杨红姣,蒲华燕,彭艳,罗均..STI埋层的高光电流和低暗计数率单光子雪崩二极管[J].红外与毫米波学报,2019,38(2):149-153,5.基金项目
Supported by National Natural Science Foundation of China (61774129,61704145,61525305,61827812),Hunan Provincial Natural Science Fund for Distinguished Young Scholars (2015JJ1014) （61774129,61704145,61525305,61827812）
